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Same model may have multiple batches, images only for reference.
SPB80N03S203GATMA1 Real Image
Same model may have multiple batches, images only for reference.

SPB80N03S203GATMA1

Part No SPB80N03S203GATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 80A D2PAK
Datasheet
SPB80N03S203GATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 150nC @ 10V
Max Input Capacitance 7020pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 3.1 mOhm @ 80A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1101484-SPB80N03S203GATMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPB80N03S203GATMA1 CAD Model

Description

The Infineon Technologies SPB80N03S203GATMA1 is an N-channel MOSFET with a drain-source breakdown voltage of 30V and continuous drain current of 80A @ 25°C.

  • Channel Type: N-channel
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 80A @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 150nC @ 10V
  • Package: PG-TO263-3-2
  • Operating Temperature: -55°C to 175°C
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
20+ $2.5196 $50.3920
49+ $2.0674 $101.3026
75+ $2.0028 $150.2100
104+ $1.9382 $201.5728
134+ $1.8736 $251.0624
179+ $1.6798 $300.6842
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Availability: 2,600 pieces
MOQ: 25 pcs
Order Increment : 1 pcs
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