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SPB80N03S2L-05 G

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Part No	SPB80N03S2L-05 G
Manufacturer	Infineon Technologies
Catalog	Transistors - FETs, MOSFETs - RF
Datasheet	SPB80N03S2L-05 G Datasheet
Sample
Rohs State	Need to verify
ECAD Module
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Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr	Infineon Technologies
Series	OptiMOS™
Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4.9mOhm @ 55A, 10V
Vgs(th) (Max) @ Id	2V @ 110µA
Gate Charge (Qg) (Max) @ Vgs	89.7 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3320 pF @ 25 V
Power Dissipation (Max)	167W (Tc)
Temperature Range - Operating	-55°C ~ 175°C (TJ)
Mounting	SMD (SMT)
Supplier Device Package	PG-TO263-3-2
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number	SPB80N
Other Names	SPB80N03S2L-05G,SPB80N03S2L05GXT,SPB80N03S2L-05 G,SP000200144
Standard Package	1,000
MSL Level	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
Win Source Part Number	1278300-SPB80N03S2L-05 G
Ultra Librarian 3D Model	Ultra Librarian SPB80N03S2L-05 G CAD Model

Alternative Products

Description

The Infineon Technologies 1278300-SPB80N03S2L-05 G is an N-channel MOSFET that has a drain to source voltage of 30V and a maximum continuous drain current of 80A (Tc).

Rds On (Max): 4.9mOhm @ 55A and 10V
Vgs(th): 2V @ 110μA
Mounting: Tape & reel
Supplier Device Package: PG-TO263-3-2
Temperature Range: -55°C ~ 175°C (TJ)
EAR99: Yes
Status: Obsolete

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