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Same model may have multiple batches, images only for reference.
SPD02N80C3ATMA1 Real Image
Same model may have multiple batches, images only for reference.

SPD02N80C3ATMA1

Part No SPD02N80C3ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 2A 3TO252
Datasheet
SPD02N80C3ATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 800V
Continuous Drain Current at 25°C 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 120μA
Max Gate Charge 16nC @ 10V
Max Input Capacitance 290pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 42W (Tc)
Maximum Rds On at Id,Vgs 2.7 Ohm @ 1.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 108170-SPD02N80C3ATMA1
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SPD02N80C3ATMA1 CAD Model

Description

The Infineon Technologies 108170-SPD02N80C3ATMA1 is an N-channel MOSFET transistor with a maximum power dissipation of 42W (Tc).

  • Package: PG-TO252-3
  • Mounting Type: SMD (SMT) technology
  • Category: discrete semiconductor products
  • Status: active
  • Temperature Range: -55°C to 150°C (TJ)
  • Drain-Source Breakdown Voltage: 800V
  • Continuous Drain Current: 2A (Tc)
  • Gate-Source Threshold Voltage: 3.9V @ 120μA
  • Maximum Gate Charge: 16nC @ 10V
  • Maximum Input Capacitance: 290pF @ 100V
  • Maximum Rds On at Id,Vgs: 2.7 Ohm @ 1.2A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $2.0651 $61.9530
70+ $1.6944 $118.6080
110+ $1.6413 $180.5430
150+ $1.5881 $238.2150
190+ $1.5362 $291.8780
255+ $1.3768 $351.0840
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MOQ: 30 pcs
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