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Same model may have multiple batches, images only for reference.
SPD15P10PLGBTMA1 Real Image
Same model may have multiple batches, images only for reference.

SPD15P10PLGBTMA1

Part No SPD15P10PLGBTMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 100V 15A TO252-3
Datasheet
SPD15P10PLGBTMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 1.54mA
Max Gate Charge 62nC @ 10V
Max Input Capacitance 1490pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 128W (Tc)
Maximum Rds On at Id,Vgs 200 mOhm @ 11.3A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 116964-SPD15P10PLGBTMA1
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SPD15P10PLGBTMA1 CAD Model

Description

The Infineon Technologies SPD15P10PLGBTMA1 is a high-performance P-channel MOSFET designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 15A @ 25°C
  • Package: PG-TO252-3
  • Mounting Type: SMD (SMT) technology
  • Power Dissipation: 128W (Tc)
  • Maximum Rds On: 200 mOhm @ 11.3A, 10V
  • Gate-Source Threshold Voltage: 2V @ 1.54mA
  • Maximum Gate Charge: 62nC @ 10V
  • Maximum Input Capacitance: 1490pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Supply and demand status: limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.6295 $57.0325
75+ $1.3370 $100.2750
120+ $1.2952 $155.4240
160+ $1.2535 $200.5600
210+ $1.2117 $254.4570
280+ $1.0863 $304.1640
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