The Infineon Technologies SPD26N06S2L-35 is an N-channel MOSFET transistor with a drain-source breakdown voltage of 55V and a continuous drain current of 30A (Tc).

• Maximum Rds On: 35 mOhm @ Id,Vgs of 13A and 10V
• Package: P-TO252-3 case
• Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
• Maximum Gate-Source Voltage: ±20V
• Maximum Gate Charge: 24nC @ 10V
• Drive Voltage: 4.5V and 10V
• Gate-Source Threshold Voltage: 2V @ 26μA
• Used in: Discrete Semiconductor Products
• Power Dissipation: 68W (Tc)
• Status: obsolete (EOL)
• Popularity: medium
• Supply and demand status: sufficient
• Commonly used in: power management and industrial applications.