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SIA427DJ-T1-GE3

Part No SIA427DJ-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET P-CH 8V 12A 6-Pin PowerPAK SC-70 T/R / MOSFET P-CH 8V 12A SC-70-6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 8V
Continuous Drain Current at 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
Gate-Source Threshold Voltage 800mV @ 250μA
Max Gate Charge 50nC @ 5V
Max Input Capacitance 2300pF @ 4V
Maximum Gate-Source Voltage ±5V
Power Dissipation (Max) 3.5W (Ta), 19W (Tc)
Maximum Rds On at Id,Vgs 16 mOhm @ 8.2A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SC-70-6 Single
Dimension PowerPAK SC-70-6
Win Source Part Number 028722-SIA427DJ-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Family Name SiA427DJ
Introduction Date June 30, 2010
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian SIA427DJ-T1-GE3 CAD Model

Description

The Vishay MOSFET SIA427DJ-T1-GE3 is a P-channel transistor designed for use in power management, industrial, portable devices, and consumer electronics.

  • Drain-Source Breakdown Voltage: 8V
  • Continuous Drain Current at 25°C: 12A (Tc)
  • Gate-Source Threshold Voltage: 800mV @ 250μA
  • Maximum Gate Charge: 50nC @ 5V
  • Maximum Rds On at Id,Vgs: 16 mOhm @ 8.2A, 4.5V
  • Gate-Source Voltage (Maximum): ±5V
  • Input Capacitance (Ciss) (Maximum) at Vds: 2300pF @ 4V

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Pricing & Ordering

Quantity Unit Price Ext. Price
200+ $0.2888 $57.7600
490+ $0.2370 $116.1300
755+ $0.2296 $173.3480
1,040+ $0.2222 $231.0880
1,345+ $0.2148 $288.9060
1,800+ $0.1926 $346.6800
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 11,523 pieces
MOQ: 200 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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