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Same model may have multiple batches, images only for reference.
SPD30N06S2L-13 Real Image
Same model may have multiple batches, images only for reference.

SPD30N06S2L-13

Part No SPD30N06S2L-13
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 30A DPAK
Datasheet
SPD30N06S2L-13 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 80μA
Max Gate Charge 69nC @ 10V
Max Input Capacitance 2300pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 136W (Tc)
Maximum Rds On at Id,Vgs 13 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package P-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 065929-SPD30N06S2L-13
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Industrial, Communications & Networking, Computers & Computer Peripherals
Ultra Librarian 3D Model Ultra Librarian SPD30N06S2L-13 CAD Model

Description

The Infineon SPD30N06S2L-13 is a N-channel MOSFET transistor designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 136W @ Tc
  • Continuous Drain Current: 30A @ 25°C
  • Drain-Source Breakdown Voltage: 55V
  • Maximum Rds On: 13 mOhm @ 30A, 10V
  • Gate-Source Threshold Voltage: 2V @ 80μA
  • Maximum Gate Charge: 69nC @ 10V
  • Maximum Input Capacitance: 2300pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Package: P-TO252-3
  • Mounting Type: SMD (SMT) technology
  • Applications: Industrial, communications & networking, and computers & computer peripherals

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220+ $0.7967 $175.2740
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520+ $0.6682 $347.4640
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