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SPD50P03L G

Part No SPD50P03L G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 50A TO-252
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 126nC @ 10V
Max Input Capacitance 6880pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 150W (Tc)
Maximum Rds On at Id,Vgs 7 mOhm @ 50A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-5
Dimension TO-252-5, DPak (4 Leads + Tab), TO-252AD
Win Source Part Number 1005929-SPD50P03L G
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SPD50P03L G CAD Model

Description

The Infineon Technologies SPD50P03L G is a P-Channel MOSFET electronic component that has a maximum power dissipation of 150W (Tc).

  • Mounting Type: SMD (SMT)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Component Status: Active
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Package: PG-TO252-5
  • Drain-Source Breakdown Voltage: 30V

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.9680 $59.0400
75+ $1.6148 $121.1100
115+ $1.5643 $179.8945
155+ $1.5139 $234.6545
200+ $1.4635 $292.7000
265+ $1.3121 $347.7065
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,000 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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