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SPI07N65C3HKSA1

Part No SPI07N65C3HKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series CoolMOS™
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 600mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id 3.9V @ 350µA
Gate Charge (Qg) (Max) @ Vgs 27 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 790 pF @ 25 V
Power Dissipation (Max) 83W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO262-3-1
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Base Product Number SPI07N
Other Names SP000014632,SPI07N65C3XK,SPI07N65C3IN,SPI07N65C3IN,SPI07N65C3X,SPI07N65C3,SPI07N65C3,SP000680982
Standard Package 500
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278323-SPI07N65C3HKSA1
Ultra Librarian 3D Model Ultra Librarian SPI07N65C3HKSA1 CAD Model

Description

The 1278323-SPI07N65C3HKSA1 is a single MOSFET transistor from Infineon Technologies.

  • Series: CoolMOS™
  • Package Type: Through-hole
  • Maximum Drain to Source Voltage: 650 V
  • Continuous Drain Current @ 25°C: 7.3A
  • Maximum Rds On: 600mOhm @ 4.6A and 10V
  • Gate Charge: 27 nC @ 10V
  • Input Capacitance: 790 pF @ 25V
  • Temperature Range: -55°C to 150°C
  • REACH: Unaffected
  • ECCN: EAR99

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.0909 $54.5450
115+ $0.8951 $102.9365
175+ $0.8672 $151.7600
240+ $0.8392 $201.4080
310+ $0.8112 $251.4720
415+ $0.7273 $301.8295
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 180 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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