The Infineon Technologies SPI08N80C3 MOSFET is a high-performance N-channel power MOSFET.

• GPTDescription: It has a drain-source breakdown voltage of 800V and can handle a continuous drain current of 8A @ 25°C.
• GPTDescription: With a maximum power dissipation of 104W, this MOSFET is ideal for use in industrial, communications and networking, consumer electronics, and power management applications.
• GPTDescription: The gate-source threshold voltage is 3.9V @ 470μA, and the maximum gate charge is 60nC @ 10V.
• GPTDescription: The maximum input capacitance is 1100pF @ 100V, and the maximum Rds On @ Id,Vgs is 650 mOhm @ 5.1A, 10V.
• GPTDescription: This product is available in PG-TO262-3-1 package with dimensions of TO-262-3 Long Leads, I2Pak, TO-262AA.