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Same model may have multiple batches, images only for reference.
SPI11N60CFD Real Image
Same model may have multiple batches, images only for reference.

SPI11N60CFD

Part No SPI11N60CFD
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 11A TO-262
Datasheet
SPI11N60CFD Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 500μA
Max Gate Charge 64nC @ 10V
Max Input Capacitance 1200pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 125W (Tc)
Maximum Rds On at Id,Vgs 440 mOhm @ 7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO262-3-1
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 065937-SPI11N60CFD
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPI11N60CFD CAD Model

Description

The Infineon Technologies 065937-SPI11N60CFD MOSFET is an N-channel device with a drain-source breakdown voltage of 650V and a continuous drain current of 11A @ 25°C.

  • GPTDescription: It has a maximum power dissipation of 125W and a maximum Rds On of 440 mOhm @ 7A and 10V.
  • GPTDescription: With a gate-source threshold voltage of 5V @ 500μA, this MOSFET is suitable for use in various applications such as power supplies, lighting, and motor control.
  • GPTDescription: Its TO-262-3 Long Leads package ensures easy mounting and installation.

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181+ $1.9242 $348.2802
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