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Same model may have multiple batches, images only for reference.
SPI11N60CFDHKSA1 Real Image
Same model may have multiple batches, images only for reference.

SPI11N60CFDHKSA1

Part No SPI11N60CFDHKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SPI11N60CFDHKSA1 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series CoolMOS™
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 440mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs 64 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1200 pF @ 25 V
Power Dissipation (Max) 125W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO262-3-1
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Base Product Number SPI11N
Other Names SP000229994,SPI11N60CFD,SPI11N60CFD,SP000680990
Standard Package 500
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278324-SPI11N60CFDHKSA1
Ultra Librarian 3D Model Ultra Librarian SPI11N60CFDHKSA1 CAD Model

Description

The Infineon Technologies SPI11N60CFDHKSA1 is a N-channel MOSFET transistor with a maximum drain-source voltage of 650V and a continuous drain current of 11A.

  • Series: CoolMOS™
  • Features: Low on-resistance, fast switching speed, and high reliability
  • Gate Charge: 64 nC @ 10 V
  • Input Capacitance: 1200 pF @ 25 Vds
  • Maximum Rds On: 440mOhm @ 7A and 10V
  • Applications: Power supplies, motor control, and other high voltage applications

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Quantity Unit Price Ext. Price
22+ $2.6900 $59.1800
53+ $2.2072 $116.9816
82+ $2.1379 $175.3078
112+ $2.0686 $231.6832
145+ $2.0005 $290.0725
194+ $1.7937 $347.9778
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