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SPI80N03S2L-04

Part No SPI80N03S2L-04
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 80A TO262-3  /  N-Channel 30 V 80A (Tc) 188W (Tc) Through Hole PG-TO262-3-1
Datasheet
Sample
Rohs State Need to verify
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series OptiMOS™
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.2mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 2V @ 130µA
Gate Charge (Qg) (Max) @ Vgs 105 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3900 pF @ 25 V
Power Dissipation (Max) 188W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO262-3-1
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Base Product Number SPI80N
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names SPI80N03S2L04X,SP000013903
Standard Package 500
Win Source Part Number 1132382-SPI80N03S2L-04
Ultra Librarian 3D Model Ultra Librarian SPI80N03S2L-04 CAD Model

Description

The Infineon Technologies SPI80N03S2L-04 is a discrete semiconductor product that belongs to the OptiMOS™ series.

  • Series: OptiMOS™
  • Channel Type: N-channel MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Maximum Continuous Drain Current (Id): 80A (Tc)
  • Maximum Rds On: 4.2mOhm @ 80A, 10V
  • Status: Obsolete
  • Suitable for: Various electronic systems

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Pricing & Ordering

Quantity Unit Price Ext. Price
24+ $2.4779 $59.4696
57+ $2.0332 $115.8924
88+ $1.9697 $173.3336
122+ $1.9061 $232.5442
157+ $1.8426 $289.2882
210+ $1.6520 $346.9200
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Availability: 6,930 pieces
MOQ: 24 pcs
Order Increment : 1 pcs
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