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Same model may have multiple batches, images only for reference.
SPP03N60S5HKSA1 Real Image
Same model may have multiple batches, images only for reference.

SPP03N60S5HKSA1

Part No SPP03N60S5HKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SPP03N60S5HKSA1 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series CoolMOS™
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 3.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.4Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 5.5V @ 135µA
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 420 pF @ 25 V
Power Dissipation (Max) 38W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-1
Package / Case TO-220-3
Base Product Number SPP03N
Other Names SPP03N60S5IN,SPP03N60S5XTIN,SPP03N60S5IN,SPP03N60S5,SPP03N60S5INR,SPP03N60S5X,SPP03N60S5XTIN
Standard Package 500
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278337-SPP03N60S5HKSA1
Ultra Librarian 3D Model Ultra Librarian SPP03N60S5HKSA1 CAD Model

Description

The Infineon Technologies 1278337-SPP03N60S5HKSA1 is an N-Channel MOSFET designed for use in single MOSFET modules.

  • Drain-Source Voltage: 600V
  • Continuous Drain Current: 3.2A
  • Rds On (Max): 1.4Ohm @ 2A and 10V
  • Vgs(th): 5.5V @ 135μA
  • Package: TO-220-3

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