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Same model may have multiple batches, images only for reference.
SPP04N80C3 Infineon Technologies
Same model may have multiple batches, images only for reference.

SPP04N80C3

Part No SPP04N80C3
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 4A TO-220AB
Datasheet
SPP04N80C3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 800V
Continuous Drain Current at 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 240μA
Max Gate Charge 31nC @ 10V
Max Input Capacitance 570pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 63W (Tc)
Maximum Rds On at Id,Vgs 1.3 Ohm @ 2.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO-220-3
Dimension TO-220-3
Win Source Part Number 065951-SPP04N80C3
Family Name SPP04N80C3
Introduction Date July 25, 2002
ECCN EAR99
Country of Origin Malaysia
Halogen Free Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian SPP04N80C3 CAD Model

Description

The Infineon Technologies SPP04N80C3 is a high-performance N-channel MOSFET designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 800V
  • Continuous Drain Current @ 25°C: 4A
  • Package: TO-220-3
  • Mounting: Through-hole technology
  • Power Dissipation: 63W (Tc)
  • Maximum Rds On: 1.3 Ohm @ 2.5A, 10V
  • Gate-Source Threshold Voltage: 3.9V @ 240μA
  • Maximum Gate Charge: 31nC @ 10V
  • Maximum Input Capacitance: 570pF @ 100V
  • Maximum Gate-Source Voltage: ±20V
  • Supply and Demand Status: Balanced
  • Applications: Industrial and power management

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