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SPP06N80C3

Part No SPP06N80C3
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 6A TO-220AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 800V
Continuous Drain Current at 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 250μA
Max Gate Charge 41nC @ 10V
Max Input Capacitance 785pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 83W (Tc)
Maximum Rds On at Id,Vgs 900 mOhm @ 3.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO-220-3
Dimension TO-220-3
Win Source Part Number 065953-SPP06N80C3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SPP06N80C3 CAD Model

Description

The Infineon Technologies MOSFET is an N-channel transistor with a maximum drain-source breakdown voltage of 800V and a continuous drain current of 6A.

  • Maximum Drain-Source Breakdown Voltage: 800V
  • Continuous Drain Current: 6A
  • Maximum Gate-Source Voltage: ±20V
  • Input Capacitance: 785pF @ 100V
  • Gate Charge: 41nC @ 10V
  • Package: PG-TO-220-3
  • Maximum Power Dissipation: 83W
  • Supply and Demand Status: Limited
  • Operating Temperature: -55°C and 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
23+ $2.5377 $58.3671
56+ $2.0822 $116.6032
86+ $2.0172 $173.4792
119+ $1.9521 $232.2999
154+ $1.8870 $290.5980
205+ $1.6918 $346.8190
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,000 pieces
MOQ: 23 pcs
Order Increment : 1 pcs
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