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Same model may have multiple batches, images only for reference.
SPP08N50C3 Infineon Technologies
Same model may have multiple batches, images only for reference.

SPP08N50C3

Part No SPP08N50C3
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 560V 7.6A TO-220AB
Datasheet
SPP08N50C3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 560V
Continuous Drain Current at 25°C 7.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 350μA
Max Gate Charge 32nC @ 10V
Max Input Capacitance 750pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 83W (Tc)
Maximum Rds On at Id,Vgs 600 mOhm @ 4.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3-1
Dimension TO-220-3
Win Source Part Number 083841-SPP08N50C3
Family Name SPP08N50C3
Introduction Date March 04, 2003
ECCN EAR99
Country of Origin Malaysia
Halogen Free Compliant
Estimated EOL Date Obsolete
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SPP08N50C3 CAD Model

Description

The Infineon Technologies SPP08N50C3 is a MOSFET electronic component that is ideal for use in various applications.

  • Packaging: Tube/rail
  • Mounting Style: Through hole
  • Power Dissipation (Max): 83W (Tc)
  • Drain-Source Breakdown Voltage: 560V
  • Maximum Rds On @ Id, Vgs: 600 mOhm @ 4.6A, 10V
  • Supply and Demand Status: Sufficient

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110+ $1.0718 $117.8980
170+ $1.0383 $176.5110
230+ $1.0049 $231.1270
300+ $0.9714 $291.4200
400+ $0.8709 $348.3600
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Availability: 6,750 pieces
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