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SPP15P10PHXKSA1

Part No SPP15P10PHXKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 100V 15A TO220-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 2.1V @ 1.54mA
Max Gate Charge 48nC @ 10V
Max Input Capacitance 1280pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 128W (Tc)
Maximum Rds On at Id,Vgs 240 mOhm @ 10.6A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO-220-3
Dimension TO-220-3
Win Source Part Number 1101623-SPP15P10PHXKSA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SPP15P10PHXKSA1 CAD Model

Description

The Infineon Technologies P-Channel MOSFET is a high-performance electronic component designed for use in various electronic devices.

  • Manufacturer: Infineon Technologies
  • Channel Type: P-Channel
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 15A @ 25°C
  • Maximum Power Dissipation: 128W (Tc)
  • Maximum Rds On: 240 mOhm @ 10.6A, 10V
  • Gate-Source Threshold Voltage: 2.1V @ 1.54mA
  • Maximum Gate Charge: 48nC @ 10V
  • Maximum Input Capacitance: 1280pF @ 25V
  • Suitable for: Power management and industrial control systems
  • Package: PG-TO-220-3
  • Mounting: Through Hole

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $1.0079 $60.4740
140+ $0.8270 $115.7800
220+ $0.8013 $176.2860
300+ $0.7754 $232.6200
390+ $0.7495 $292.3050
520+ $0.6720 $349.4400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 65,000 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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