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Same model may have multiple batches, images only for reference.
SPP18P06P H Real Image
Same model may have multiple batches, images only for reference.

SPP18P06P H

Part No SPP18P06P H
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 18.7A TO-220
Datasheet
SPP18P06P H Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 18.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 28nC @ 10V
Max Input Capacitance 860pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 81.1W (Ta)
Maximum Rds On at Id,Vgs 130 mOhm @ 13.2A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO-220-3
Dimension TO-220-3
Win Source Part Number 192419-SPP18P06P H
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SPP18P06P H CAD Model

Description

The Infineon Technologies SPP18P06P H is a MOSFET discrete semiconductor product with a polarity of P-Channel.

  • Polarity: P-Channel
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current @ 25°C: 18.7A (Ta)
  • Power Dissipation (max): 81.1W (Ta)
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.4352 $50.2320
85+ $1.1776 $100.0960
135+ $1.1408 $154.0080
185+ $1.1040 $204.2400
235+ $1.0672 $250.7920
315+ $0.9568 $301.3920
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 500 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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