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Same model may have multiple batches, images only for reference.
SPP24N60CFDHKSA1 Real Image
Same model may have multiple batches, images only for reference.

SPP24N60CFDHKSA1

Part No SPP24N60CFDHKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SPP24N60CFDHKSA1 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series CoolMOS™
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 21.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 185mOhm @ 15.4A, 10V
Vgs(th) (Max) @ Id 5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs 143 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3160 pF @ 25 V
Power Dissipation (Max) 240W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-1
Package / Case TO-220-3
Base Product Number SPP24N
Other Names SPP24N60CFD,SPP24N60CFD,SP000264426,SP000681070
Standard Package 500
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278332-SPP24N60CFDHKSA1
Ultra Librarian 3D Model Ultra Librarian SPP24N60CFDHKSA1 CAD Model

Description

The Infineon Technologies SPP24N60CFDHKSA1 is an N-Channel CoolMOS™ MOSFET transistor designed for use in discrete semiconductor products.

  • Drain to Source Voltage: 650 V
  • Continuous Drain Current: 21.7 A
  • On-Resistance: 185 mOhm @ 15.4 A and 10 V
  • Gate Charge: 143 nC @ 10 V
  • Input Capacitance: 3160 pF @ 25 V
  • Package: TO-220-3
  • Temperature Range: -55°C to 150°C

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