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Same model may have multiple batches, images only for reference.
RFP12N18 Intersil Corporation
Same model may have multiple batches, images only for reference.

RFP12N18

Part No RFP12N18
Manufacturer Harris Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Harris Corporation
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 180 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 250mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1700 pF @ 25 V
Power Dissipation (Max) 75W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 660100-RFP12N18
Ultra Librarian 3D Model Ultra Librarian RFP12N18 CAD Model

Description

The RFP12N18 is an N-Channel MOSFET transistor designed for use in discrete semiconductor products.

  • Vdss: 180V
  • Id: 12A @ 25°C
  • Rds On: 250mOhm @ 12A and 10V
  • Package: TO-220-3
  • Mounting Type: Through hole
  • Technology: MOSFET (Metal Oxide)
  • Vgs: ±20V
  • Manufacturer: Harris Corporation
  • Product Status: Active

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