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Same model may have multiple batches, images only for reference.
IRFW720BTMNL Real Image
Same model may have multiple batches, images only for reference.

IRFW720BTMNL

Part No IRFW720BTMNL
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL  POWER MOSFET
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Fairchild/ON Semiconductor
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 400 V
Current - Continuous Drain (Id) @ 25°C 3.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.75Ohm @ 1.65A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 600 pF @ 25 V
Power Dissipation (Max) 3.13W (Ta), 49W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Standard Package 800 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 161066-IRFW720BTMNL
Ultra Librarian 3D Model Ultra Librarian IRFW720BTMNL CAD Model

Description

The 161066-IRFW720BTMNL is an N-channel MOSFET transistor.

  • Drain to source voltage: 400V
  • Continuous drain current: 3.3A
  • Maximum on-resistance: 1.75Ohm @ 1.65A and 10V gate-source voltage
  • Gate threshold voltage: 4V @ 250µA
  • Power dissipation: 3.13W (Ta) and 49W (Tc)
  • Mounting: surface mountable in a TO-263-3, D²Pak package
  • Gate charge: 18nC @ 10V
  • Input capacitance: 600pF @ 25V drain-source voltage
  • Operating temperature range: -55°C to 150°C
  • Status: active product from Fairchild/ON Semiconductor

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