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SPP80N03S2L05AKSA1

Part No SPP80N03S2L05AKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 80A TO-220AB / Trans MOSFET N-CH 30V 80A 3-Pin(3+Tab) TO-220AB Tube
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series OptiMOS
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 30V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Maximum) @ Id 2V @ 110μA
Gate Charge (Qg) (Maximum) @ Vgs 89.7nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 3320pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 167W (Tc)
Rds On (Maximum) @ Id, Vgs 5.2 mOhm @ 55A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Style Through Hole
Manufacturer Package PG-TO220-3-1
Package TO-220-3
Win Source Part Number 795316-SPP80N03S2L05AKSA1
Popularity Medium
Supply and Demand Status Limited
Family Name SPP80N03S2L05AKSA1
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date 2022
Ultra Librarian 3D Model Ultra Librarian SPP80N03S2L05AKSA1 CAD Model

Description

The Infineon SPP80N03S2L05AKSA1 is an N-channel MOSFET transistor.

  • Drain to Source Voltage: 30V
  • Continuous Drain Current: 80A @ Tc
  • Gate Charge (Qg) (Max) @ Vgs: 89.7nC @ 10V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 3320pF @ 25V
  • Power Dissipation: 167W (Tc)
  • Rds On (Maximum) @ Id, Vgs: 5.2 mOhm @ 55A, 10V
  • Package: TO-220-3

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