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Same model may have multiple batches, images only for reference.
SPP80P06P H Real Image
Same model may have multiple batches, images only for reference.

SPP80P06P H

Part No SPP80P06P H
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 80A TO-220
Datasheet
SPP80P06P H Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 5.5mA
Max Gate Charge 173nC @ 10V
Max Input Capacitance 5033pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 340W (Tc)
Maximum Rds On at Id,Vgs 23 mOhm @ 64A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3-1
Dimension TO-220-3
Win Source Part Number 1101641-SPP80P06P H
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SPP80P06P H CAD Model

Description

The Infineon Technologies 1101641-SPP80P06P H is a P-Channel MOSFET that is widely used in various electronic circuits.

  • Maximum Power Dissipation: 340W (Tc)
  • Continuous Drain Current: 80A (Tc) @ 25°C
  • Popularity: Medium popularity
  • Status: Sufficient supply and demand status
  • Commonly Used In: Applications such as motor controllers, power supplies, and lighting systems.

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17+ $5.8824 $100.0008
27+ $5.6986 $153.8622
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47+ $5.3309 $250.5523
63+ $4.7794 $301.1022
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MOQ: 7 pcs
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