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Same model may have multiple batches, images only for reference.
SPS01N60C3 Real Image
Same model may have multiple batches, images only for reference.

SPS01N60C3

Part No SPS01N60C3
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 800MA TO251-3
Datasheet
SPS01N60C3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 800mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 250μA
Max Gate Charge 5nC @ 10V
Max Input Capacitance 100pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 11W (Tc)
Maximum Rds On at Id,Vgs 6 Ohm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO251-3
Dimension TO-251-3 Stub Leads, IPak
Win Source Part Number 1101644-SPS01N60C3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SPS01N60C3 CAD Model

Description

The SPS01N60C3 is an N-Channel MOSFET electronic component manufactured by Infineon Technologies.

  • Product Type: Discrete Semiconductor Products
  • Power Dissipation: 11W (Tc)
  • Drain-Source Breakdown Voltage: 650V
  • Continuous Drain Current: 800mA (Tc)
  • Gate-Source Threshold Voltage: 3.9V @ 250μA
  • Gate Charge: 5nC @ 10V
  • Package: PG-TO251-3
  • Operating Temperature Range: -55°C to 150°C
  • Drive Voltage: 10V
  • Popularity: Medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $0.9208 $50.6440
135+ $0.7555 $101.9925
205+ $0.7319 $150.0395
285+ $0.7083 $201.8655
370+ $0.6847 $253.3390
490+ $0.6139 $300.8110
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 36,500 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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