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Same model may have multiple batches, images only for reference.
SPS02N60C3BKMA1
Same model may have multiple batches, images only for reference.

SPS02N60C3BKMA1

Part No SPS02N60C3BKMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description LOW POWER_LEGACY / N-Channel 600 V 1.8A (Tc) 25W (Tc) Through Hole PG-TO251-3-11
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series CoolMOS™
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id 3.9V @ 80µA
Gate Charge (Qg) (Max) @ Vgs 12.5 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 200 pF @ 25 V
Power Dissipation (Max) 25W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO251-3-11
Package / Case TO-251-3 Stub Leads, IPak
Base Product Number SPS02N
Standard Package 1,500 pcs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 795317-SPS02N60C3BKMA1
Ultra Librarian 3D Model Ultra Librarian SPS02N60C3BKMA1 CAD Model

Description

The SPS02N60C3BKMA1 is a N-channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) from Infineon Technologies.

  • Drain-to-Source Voltage Rating: 600V
  • Continuous Drain Current Rating: 1.8A
  • On-State Resistance: 3Ohm @ a gate-source voltage of 10V
  • Mounting: Through-hole
  • Package: TO-251-3
  • Temperature Range: -55°C to 150°C

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