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Same model may have multiple batches, images only for reference.
SPU08P06P Real Image
Same model may have multiple batches, images only for reference.

SPU08P06P

Part No SPU08P06P
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 8.83A TO-251
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 8.83A (Ta)
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 13nC @ 10V
Max Input Capacitance 420pF @ 25V
Power Dissipation (Max) 42W (Tc)
Maximum Rds On at Id,Vgs 300 mOhm @ 6.2A, 10V
Mounting Through Hole
Case / Package PG-TO251-3
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1101649-SPU08P06P
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SPU08P06P CAD Model

Description

The Infineon Technologies 1101649-SPU08P06P is a P-channel MOSFET with a drain-source breakdown voltage of 60V and a continuous drain current of 8.83A at 25°C.

  • Manufacturer: Infineon Technologies
  • Product Name: 1101649-SPU08P06P
  • Type: P-channel MOSFET
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current @ 25°C: 8.83A @ 25°C
  • Power Dissipation: 42W @ Tc
  • Package: PG-TO251-3
  • Mounting: Through the hole
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 13nC @ 10V
  • Maximum Input Capacitance: 420pF @ 25V
  • Maximum Rds On @ Id, Vgs: 300 mOhm @ 6.2A, 10V
  • Status: Obsolete(EOL)
  • Popularity: Medium

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220+ $0.5359 $117.8980
335+ $0.5198 $174.1330
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800+ $0.4354 $348.3200
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