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Same model may have multiple batches, images only for reference.
SPW11N60S5FKSA1 Real Image
Same model may have multiple batches, images only for reference.

SPW11N60S5FKSA1

Part No SPW11N60S5FKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SPW11N60S5FKSA1 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series CoolMOS™
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 380mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 5.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs 54 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1460 pF @ 25 V
Power Dissipation (Max) 125W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-3-1
Package / Case TO-247-3
Base Product Number SPW11N
Other Names SP000012462,SPW11N60S5X,SPW11N60S5IN,SPW11N60S5IN,SPW11N60S5,SPW11N60S5XK,SPW11N60S5
Standard Package 240
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278316-SPW11N60S5FKSA1
Ultra Librarian 3D Model Ultra Librarian SPW11N60S5FKSA1 CAD Model

Description

The Infineon Technologies 1278316-SPW11N60S5FKSA1 is an N-channel MOSFET transistor designed for use in high voltage applications.

  • Maximum Drain to Source Voltage: 600V
  • Maximum Continuous Drain Current: 11A
  • On-State Resistance: 380mOhm @ 7A, 10V gate-source voltage
  • Gate Threshold Voltage: 5.5V @ 500uA
  • Package: TO-247-3

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