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Same model may have multiple batches, images only for reference.
SPW17N80C3FKSA1 Real Image
Same model may have multiple batches, images only for reference.

SPW17N80C3FKSA1

Part No SPW17N80C3FKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series CoolMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 290mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 3.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 177 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2320 pF @ 25 V
Power Dissipation (Max) 227W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-3-1
Package / Case TO-247-3
Base Product Number SPW17N80
Other Names SPW17N80C3XK,2156-SPW17N80C3FKSA1,SP000013369,SPW17N80C3IN,SPW17N80C3X,ROCINFSPW17N80C3FKSA1,SPW17N80C3XTIN,SPW17N80C3IN,SPW17N80C3INR,SPW17N80C3XTIN,SPW17N80C3
Standard Package 30
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278358-SPW17N80C3FKSA1
Ultra Librarian 3D Model Ultra Librarian SPW17N80C3FKSA1 CAD Model

Description

The SPW17N80C3FKSA1 is an N-channel MOSFET transistor from Infineon Technologies.

  • Drain to Source Voltage: 800 V
  • Continuous Drain Current: 17A (Tc) @ 25°C
  • Rds On (Max): 290mOhm @ 11A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 25 V
  • Power Dissipation: 227W (Tc)
  • Temperature Range: -55°C ~ 150°C (TJ)
  • Package Type: TO-247-3
  • Supplier Device Package: PG-TO247-3-1

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52+ $1.9506 $101.4312
80+ $1.8897 $151.1760
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190+ $1.5849 $301.1310
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