The SPW24N60CFDFKSA1 is a CoolMOS™ CFD7A series power MOSFET from Infineon Technologies. It is designed for resonant switching topologies and provides fast switching and high efficiency. The CoolMOS™ CFD7A family offers optimized performance specifically for applications where fast body diode and low Qrr are critical.

Applications:

• Lighting: LED Lighting applications using resonant topologies.
• Power Factor Correction (PFC): Used in PFC stages of power supplies.
• Server and Telecom Power Supplies: Ideal for the LLC stages and other resonant converter topologies.
• Chargers and Adapters: Used in resonant charger designs.
• Induction Heating: Applications utilizing resonant switching.

Features:

• CoolMOS™ CFD7A Technology: Offers fast switching, low switching losses and robustness.
• Integrated Fast Body Diode: Optimized for resonant switching topologies (LLC).
• Low Reverse Recovery Charge (Qrr): Reduces diode losses and improves efficiency.
• Low RDS(on): Reduces conduction losses for increased efficiency.
• Reduced Gate Charge (Qg): Low Qg helps to reduce switching losses.
• Improved Commutation Ruggedness: Enhanced robustness against hard commutation events.

Benefits:

• High Efficiency: Fast body diode and low Qrr result in lower switching losses and higher overall efficiency.
• Improved System Reliability: Rugged design enhances system reliability.
• Simplified Design: Optimized for resonant topologies, easing design complexity.
• Lower System Cost: High efficiency can reduce heatsink requirements and overall system cost.
• Increased Power Density: Enables higher power density in power supply designs.

Additional Details:

The SPW24N60CFDFKSA1 has a drain-source voltage (VDS) rating of 600V and a continuous drain current (ID) which varies depending on the operating conditions and case temperature. It is typically available in a TO-247 package. It is important to consult the Infineon datasheet for complete specifications, including thermal resistance, gate charge characteristics, and safe operating area. The fast body diode characteristics of this MOSFET make it particularly suitable for resonant converter topologies such as LLC resonant converters, where the body diode is frequently utilized during switching transitions.