The GT28F640W18B85 is a 64-Megabit (64Mb) CMOS flash memory device manufactured by Intel. Organized as 4M x 16 bits, it's designed for applications requiring high-density, non-volatile storage. The device features a Buffered Enhanced Factory Programming (BEFP) option, providing efficient programming during manufacturing. Its low power consumption and robust design make it suitable for a range of embedded systems.

Applications

• Embedded Systems: Ideal for storing firmware, boot code, and configuration data in embedded systems.
• Networking Equipment: Used in routers, switches, and network appliances for storing OS images and application code.
• Industrial Control Systems: Suitable for storing program code, calibration data, and configuration settings in industrial automation equipment.
• Automotive Systems: Employed for storing software and data in automotive control units (ECUs).
• Telecommunications Equipment: Used in communication devices for storing firmware and configuration parameters.
• Aerospace Applications: Used in aerospace systems for storing critical program code and data.

Features

• High-Density Storage: Offers 64Mb of non-volatile flash memory.
• CMOS Technology: Ensures low power consumption for energy-efficient operation.
• Buffered Enhanced Factory Programming (BEFP): Enables efficient programming during manufacturing.
• Sector Erase Architecture: Allows for selective erasure and reprogramming of individual memory sectors.
• x16 Data Bus Width: Supports 16-bit data access for improved data transfer rates.
• Automatic Write Timing: Simplifies write operations by automatically adjusting timing parameters.

Benefits

• Reliable Non-Volatile Storage: Ensures long-term data retention without requiring power.
• Low Power Consumption: Minimizes power requirements, making it suitable for battery-powered devices.
• Efficient Factory Programming: BEFP simplifies and speeds up the manufacturing programming process.
• Flexible Memory Management: Sector erase capability allows for efficient memory utilization and updates.
• Improved Data Transfer Rates: x16 data bus width enables faster data access and transfer.
• Simplified Programming: Automatic write timing simplifies the programming process, reducing development time.

Technical Specifications

Key technical specifications include:

• Memory Size: 64 Megabits (4M x 16).
• Supply Voltage: Typically 3.0V or 5.0V.
• Operating Temperature Range: Industrial (-40°C to +85°C).
• Access Time: Specific access time (e.g., 85ns) depends on the exact part number variant.
• Erase/Program Cycles: Endurance is generally rated at 100,000 cycles per sector.
• Data Retention: Data retention typically guaranteed for 20 years.

The GT28F640W18B85 is a high-density flash memory solution that provides reliable non-volatile storage for a wide range of applications. Its combination of high capacity, low power consumption, and BEFP makes it an excellent choice for embedded systems requiring efficient and dependable memory.