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Manufacturer Intel
Win Source Part Number 052311-TE28F800C3BD70
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TE28F800C3BD70 CAD Model

Description

The Intel TE28F800C3BD70 is an 8-Mbit (1M x 8) flash memory device. This memory is specifically designed for embedded systems, offering non-volatile storage capabilities that are critical for retaining data and code in environments where power interruptions may occur.

Applications:

  • Embedded Systems
  • Industrial Automation
  • Networking Devices
  • Telecommunications Equipment
  • Automotive Electronics

Features:

  • 8-Mbit (1M x 8) Flash Memory: Provides sufficient storage capacity for embedded applications.
  • Non-Volatile Storage: Retains data even when power is turned off.
  • High-Speed Read Access: Facilitates quick retrieval of stored information, improving system performance.
  • Sector Erase Architecture: Allows for flexible and efficient memory management, enabling selective erasure and programming.
  • Low Power Consumption: Optimizes energy usage, making it suitable for battery-powered devices.
  • Extended Temperature Range: Ensures reliable operation in diverse environmental conditions.

Benefits:

  • Reliable Data Retention: Ensures that critical data and code are preserved, even in the event of power failures.
  • Enhanced System Performance: Quick read access times contribute to faster overall system operation.
  • Efficient Memory Management: Sector erase capability allows for targeted memory updates, reducing erase and program times.
  • Energy Efficient Operation: Low power consumption extends the lifespan of battery-powered applications.
  • Robust Performance in Harsh Environments: Extended temperature range ensures reliable operation in a wide range of conditions.

The TE28F800C3BD70 is commonly used in applications requiring durable and dependable memory storage. Its non-volatile nature guarantees that stored data remains intact, even without a continuous power supply. The fast read access times improve the responsiveness of embedded systems, while the sector erase architecture simplifies memory management and updates. With its low power consumption, this flash memory is an excellent choice for applications where energy efficiency is a priority.

Technical Specifications:

  • Density: 8 Mbit
  • Organization: 1M x 8
  • Supply Voltage: 3.0V or 5.0V (depending on the specific variant)
  • Operating Temperature: -40°C to +85°C
  • Package Type: TSOP (Thin Small Outline Package)

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