The IR2125Z is a high voltage, high speed power MOSFET and IGBT driver from International Rectifier, now Infineon Technologies. This gate driver is designed to drive N-channel MOSFETs and IGBTs in a half-bridge configuration. It features a floating channel designed for bootstrap operation.

Applications

• Motor drives
• Power supplies
• Lighting ballasts
• Class D audio amplifiers
• General purpose inverter

Features

• Floating channel designed for bootstrap operation
• Gate drive supply range from 10V to 20V
• Logic input compatible with 3.3V and 5V logic
• Under-voltage lockout (UVLO) for both channels
• Output source/sink current capability of 140mA/420mA
• Matched propagation delay for both channels

Benefits

• Simplified gate drive circuitry
• Increased system efficiency
• Robust operation in noisy environments
• Enhanced system reliability
• Compact design

Additional Details

The IR2125Z is designed for ease of use and reliable operation. The floating channel allows the high-side driver to operate with a voltage rail up to 600V. The under-voltage lockout (UVLO) feature protects the MOSFETs and IGBTs from damage due to insufficient gate drive voltage. The matched propagation delay ensures that both channels switch simultaneously, minimizing dead-time losses. The device is typically supplied in a SOIC-8 package. The typical turn-on propagation delay is 120ns and the typical turn-off propagation delay is 85ns.