The IR21367PBF is a high-voltage, high-speed power MOSFET and IGBT driver with three independent high and low side referenced output channels. Manufactured by International Rectifier (now Infineon Technologies), this driver IC is designed for 3-phase motor drive applications and other power conversion systems where precise and efficient control of power switches is required. It features advanced protection features and optimized dead-time control, ensuring reliable and robust operation.

Applications:

• 3-Phase Motor Drives: Used in industrial motor control, appliance motor control, and automotive motor control.
• Inverter Systems: Implemented in solar inverters, UPS systems, and other power conversion applications.
• Power Supplies: Drives power MOSFETs or IGBTs in high-frequency switching power supplies.
• Induction Heating: Controls the power switches in induction heating systems.
• Welding Equipment: Used in welding machines to control the current and voltage delivered to the welding arc.

Features:

• Three Independent Half-Bridge Drivers: Provides isolated gate drive signals for three high-side and three low-side power switches.
• High-Voltage Capability: Supports bus voltages up to 600V, suitable for various power applications.
• High-Speed Operation: Offers fast switching speeds, minimizing switching losses and improving efficiency.
• Integrated Bootstrap Diode: Simplifies high-side gate drive circuitry and reduces external component count.
• Over-Current Protection: Protects the power switches from damage due to over-current conditions.
• Undervoltage Lockout (UVLO): Prevents operation with insufficient supply voltage, ensuring safe and reliable operation.
• Dead-Time Control: Optimizes dead-time between switching transitions to minimize distortion and improve efficiency.

Benefits:

• Improved Motor Control: Precise gate drive control enhances the performance and efficiency of 3-phase motors.
• Increased System Reliability: Integrated protection features safeguard against over-current and undervoltage conditions.
• Reduced System Cost: Integrated bootstrap diode and other features reduce external component count.
• Enhanced Efficiency: Fast switching speeds minimize switching losses and improve overall system efficiency.
• Simplified Design: Integrated functions simplify circuit design and reduce development time.

Technical Specifications: The IR21367PBF operates with a supply voltage range of 10V to 20V. It can drive power MOSFETs and IGBTs with gate charges up to several nanocoulombs. The typical dead-time is programmable via an external resistor. It is available in a DIP-28 package. The operating temperature range is -40°C to +125°C.