The IR21366JPBF is a high-voltage, high-speed power MOSFET and IGBT driver with three independent high-side and low-side referenced output channels. Housed in a compact package, it's designed for applications requiring robust and efficient control of power devices. This driver features proprietary HVIC and latch immune CMOS technologies, enabling ruggedized monolithic construction.

Applications:

• 3-Phase motor drives
• Inverter circuits
• Power supplies
• Induction heating
• Welding equipment

Features:

• Floating channel designed for bootstrap operation
• Tolerant to negative transient voltage
• Gate drive supply range from 10V to 20V
• Undervoltage lockout for all channels
• Cross-conduction prevention logic
• Matched propagation delay for all channels
• 3.3V logic compatible

Benefits:

• Simplified gate drive circuitry reduces component count and board space
• Improved system reliability due to undervoltage lockout and cross-conduction prevention
• Enhanced efficiency and performance through optimized switching characteristics
• Robust operation in noisy electrical environments
• Easy interfacing with microcontrollers and DSPs

Additional Details:

The IR21366JPBF features a typical propagation delay of 150ns and is capable of driving high-side and low-side N-channel MOSFETs or IGBTs. The integrated undervoltage lockout (UVLO) function protects the power devices from operating in a potentially damaging state during startup or low-voltage conditions. The device's high noise immunity and robust design make it suitable for demanding industrial applications. The operating temperature range is typically -40°C to +125°C.