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IRF1302

Part No IRF1302
Manufacturer International Rectifier
Catalog Transistors - FETs, MOSFETs - RF
Description Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A⑥)
Sample
Rohs State rohs
ECAD Module
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Manufacturer INTERNATIONAL RECTIFIER
Win Source Part Number 1186881-IRF1302
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRF1302 CAD Model

Description

The IRF1302 is an N-Channel power MOSFET from International Rectifier (now Infineon Technologies). This MOSFET is designed for high-current, high-speed switching applications.

Applications:

  • High-Current DC-DC Converters: Used in power supplies for computers, servers, and industrial equipment.
  • Motor Control: Drives high-power DC motors in electric vehicles, robotics, and industrial automation.
  • Inverters: Converts DC power to AC power in uninterruptible power supplies (UPS) and solar inverters.
  • Audio Amplifiers: Used in high-power audio amplifiers for switching and amplification.

Features:

  • N-Channel MOSFET: Operates with a positive gate-source voltage to enhance electron flow.
  • Low On-Resistance (RDS(on)): Minimizes power loss due to conduction.
  • High Current Capability: Can handle significant drain current.
  • Fast Switching Speed: Enables rapid transitions between on and off states.
  • Avalanche Rated: Robust against voltage spikes and inductive kickback.

Benefits:

  • Increased Efficiency: Low RDS(on) reduces power dissipation, leading to higher efficiency.
  • High Power Handling: Suitable for demanding high-current applications.
  • Improved Thermal Performance: Low RDS(on) contributes to reduced heat generation.
  • Simplified Design: Standard MOSFET gate drive requirements.
  • Robustness and Reliability: Avalanche rating ensures reliable operation under transient conditions.

Additional Details:

The IRF1302's key specifications include the drain-source voltage rating (VDS), gate-source voltage rating (VGS), continuous drain current rating (ID), and pulsed drain current rating (IDM). The on-resistance (RDS(on)) is a critical parameter specified at a given gate-source voltage and drain current. The gate charge (Qg) also influences switching performance. Typically available in a TO-220 package or similar through-hole package, proper heat sinking is crucial for high-power applications to manage thermal dissipation. The datasheet should be consulted for detailed electrical characteristics, thermal resistance values, and safe operating area (SOA) information. Careful PCB layout is recommended to minimize parasitic inductance.

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Pricing & Ordering

Quantity Unit Price Ext. Price
12+ $5.0050 $60.0600
29+ $4.1067 $119.0943
44+ $3.9784 $175.0496
60+ $3.8501 $231.0060
78+ $3.7216 $290.2848
104+ $3.3367 $347.0168
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,911 pieces
MOQ: 12 pcs
Order Increment : 1 pcs
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