The IRF6608TR is a DirectFET™ power MOSFET from International Rectifier, specifically designed for high-frequency synchronous rectification in power supplies and DC-DC converters. It offers exceptional efficiency and power density in a compact package.

Applications:

• Synchronous rectification in DC-DC converters
• Point-of-Load (POL) converters
• Isolated DC-DC converters
• High frequency power supplies
• OR-ing MOSFET applications

Features:

• DirectFET™ Package
• Low RDS(on)
• Low Qg (Total Gate Charge)
• Low Thermal Resistance
• 100% Rg tested
• RoHS Compliant

Benefits:

• Increased power density due to the compact DirectFET™ package
• Higher efficiency and reduced power losses thanks to the low RDS(on) and Qg
• Improved thermal performance with low thermal resistance
• Simplified design with 100% Rg testing
• Environmentally friendly due to RoHS compliance

Additional Details:

The IRF6608TR has a drain-source voltage (VDS) rating of 30V and a gate-source voltage (VGS) rating of ±20V. The on-resistance (RDS(on)) is typically around 6.5 mΩ at VGS = 10V. The total gate charge (Qg) is typically around 11nC. The DirectFET™ package allows for efficient heat transfer from both the top and bottom of the device. The device is suitable for surface mount assembly and has a low profile. It supports high switching frequencies due to its low gate charge and on-resistance. The maximum drain current is 19A. The device is commonly used in telecom and server power supplies.