The IRF7759L2PBF is a dual N-Channel MOSFET from International Rectifier, designed for high-efficiency power conversion in a compact package. This device features low on-resistance (RDS(on)) and gate charge (Qg), minimizing power losses and improving overall system efficiency. Its thermally enhanced package allows for improved heat dissipation, enabling higher power density applications.

Applications:

• Synchronous Rectification in DC-DC converters
• Load Switching
• Power Management in portable devices
• Battery Management Systems (BMS)
• Motor control applications

Features:

• Dual N-Channel MOSFET configuration
• Low RDS(on) to reduce conduction losses
• Low gate charge (Qg) for fast switching
• Thermally enhanced package for improved heat dissipation
• Avalanche rated
• Lead-free and RoHS compliant

Benefits:

• Improved system efficiency due to low RDS(on) and Qg
• Higher power density due to compact package and enhanced thermal performance
• Reduced power losses, leading to lower operating temperatures and improved reliability
• Simplified design due to dual MOSFET configuration
• Environmentally friendly due to lead-free and RoHS compliance

Additional Details:

The IRF7759L2PBF operates with a drain-source voltage (VDS) of up to 30V and a continuous drain current (ID) of up to 12A. The static drain-source on-resistance is typically 8.5 mΩ at VGS = 10V. It is available in a PowerSO-8 package. The low gate charge contributes to reduced switching losses at higher frequencies. This MOSFET is suitable for applications requiring high efficiency and compact size.