The IRFH5030PBF is a Power MOSFET from International Rectifier, designed for high-efficiency power conversion in various applications. This device leverages advanced trench MOSFET technology to achieve low on-resistance (RDS(on)) and gate charge, minimizing power losses and enhancing overall system efficiency. The IRFH5030PBF is available in a PQFN package, offering excellent thermal performance and compact footprint.

Applications:

• Synchronous Rectification in DC-DC Converters
• Power Management in Computing Systems
• Battery Management Systems (BMS)
• Motor Control Applications
• High-Frequency Switching Power Supplies

Features:

• Low RDS(on) for Reduced Conduction Losses
• Low Gate Charge (Qg) for Reduced Switching Losses
• Optimized for High-Frequency Operation
• Avalanche Rated
• RoHS Compliant
• Advanced Trench MOSFET Technology

Benefits:

• Increased Power Conversion Efficiency
• Improved Thermal Performance
• Reduced System Size and Cost
• Enhanced System Reliability
• Simplified Design

Specifications:

The IRFH5030PBF has a maximum drain-source voltage (VDS) of 30V and a continuous drain current (ID) of up to 38A (depending on the case temperature). It boasts a very low RDS(on) of 4.0 mΩ at VGS = 10V. The device's low gate charge and fast switching speeds make it ideal for high-frequency applications. The PQFN package provides excellent thermal resistance, facilitating efficient heat dissipation. The MOSFET is also avalanche rated and RoHS compliant.