The IRFMG40 is an N-channel power MOSFET from International Rectifier, designed for high-voltage, high-speed switching applications. This MOSFET is commonly used in industrial and power supply applications where efficient power conversion is critical.

Applications:

• High-Voltage Power Supplies
• Motor Control
• Lighting Ballasts
• High-Frequency Inverters
• Solid State Relays

Features:

• N-Channel MOSFET
• High Voltage Rating
• Fast Switching Speed
• Avalanche Energy Rated
• TO-251 Package

Benefits:

• Efficient Power Switching
• Enhanced System Reliability
• Suitable for High-Voltage Applications
• Reduced Switching Losses
• Simplified Design

Additional Details:

The IRFMG40 has a drain-source voltage (VDS) rating of 400V and a gate-source voltage (VGS) rating of ±20V. The on-resistance (RDS(on)) is typically around 1.8 Ohms at VGS = 10V. The gate threshold voltage is typically between 2V and 4V. The maximum drain current is 2.6A. The device is supplied in a TO-251 package. The operating temperature range is -55°C to +150°C. The fast switching speed reduces switching losses in high-frequency applications. The avalanche energy rating ensures robust operation under transient conditions. This MOSFET is suitable for use in various industrial and commercial applications requiring high-voltage switching.