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RT2P07M-T111-1

Part No RT2P07M-T111-1
Manufacturer ISAHAYA
Catalog Custom Parts (N - R)
Sample
Rohs State Need to verify
ECAD Module
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RoHS Non-Compliant
Win Source Part Number 1111007-RT2P07M-T111-1
Categories Custom Parts
Manufacturer ISAHAYA
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian RT2P07M-T111-1 CAD Model

Description

The RT2P07M-T111-1 is a P-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ISAHAYA Electronics Corporation. This MOSFET is designed for power management applications, offering efficient switching and low on-resistance. ISAHAYA is known for producing reliable semiconductor devices used in various electronic systems.

Applications:

  • DC-DC converters.
  • Load switches.
  • Power management circuits in portable devices.
  • Motor control circuits.
  • LED lighting drivers.

Features:

  • Low on-resistance (RDS(on)) for efficient power conversion.
  • Low gate charge (Qg) for fast switching speed.
  • Avalanche rated for ruggedness.
  • Surface mount package for easy assembly.
  • RoHS compliant for environmental protection.

Benefits:

  • Reduces power loss and improves energy efficiency.
  • Enables faster switching speeds for higher frequency operation.
  • Provides robust performance under harsh conditions.
  • Simplifies circuit board assembly.
  • Complies with environmental regulations.

Additional Details:

The RT2P07M-T111-1 MOSFET typically has a drain-source voltage (VDS) rating of -20V and a continuous drain current (ID) rating of -7A. The on-resistance (RDS(on)) is typically specified at a gate-source voltage of -4.5V, ensuring efficient operation at lower gate drive voltages. The gate charge (Qg) is minimized to reduce switching losses and improve efficiency. The device is packaged in a small outline transistor (SOT) package, suitable for surface mount assembly. The operating temperature range is usually between -55°C and +150°C, making it suitable for a wide range of applications. ISAHAYA provides detailed datasheets that outline the device's electrical characteristics, thermal performance, and reliability data. The avalanche rating ensures that the MOSFET can withstand transient voltage spikes without damage. The device is designed for automated assembly processes, contributing to efficient manufacturing. The RT2P07M-T111-1 is commonly used in battery-powered devices to efficiently switch power and extend battery life.

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6537 $58.8330
220+ $0.5359 $117.8980
335+ $0.5198 $174.1330
460+ $0.5024 $231.1040
595+ $0.4863 $289.3485
800+ $0.4354 $348.3200
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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