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Same model may have multiple batches, images only for reference.
IXBH32N300 Real Image
Same model may have multiple batches, images only for reference.

IXBH32N300

Part No IXBH32N300
Manufacturer IXYS
Catalog IGBTs - Single
Description IGBT 3000V 80A 400W TO247 / IGBT 3000 V 80 A 400 W Through Hole TO-247AD
Datasheet
IXBH32N300 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr IXYS
Series BIMOSFET™
Package Tube
Product Status Active
Voltage - Collector Emitter Breakdown (Max) 3000 V
Current - Collector (Ic) (Max) 80 A
Current - Collector Pulsed (Icm) 280 A
Vce(on) (Max) @ Vge, Ic 3.2V @ 15V, 32A
Power - Max 400 W
Input Type Standard
Gate Charge 142 nC
Reverse Recovery Time (trr) 1.5 µs
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247AD
Base Product Number IXBH32
Standard Package 30 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
California Prop 65 Warning Information
Win Source Part Number 876052-IXBH32N300
Ultra Librarian 3D Model Ultra Librarian IXBH32N300 CAD Model

Description

The IXBH32N300 is a single IGBT transistor from the BIMOSFET™ series.

  • Package: Tube
  • Standard Package Quantity: 30 pcs
  • Maximum Power: 400 W
  • Reverse Recovery Time (trr): 1.5 µs
  • Collector-Emitter Breakdown Voltage (Vce): 3000 V
  • Maximum Collector Current (Ic): 80 A
  • Maximum Pulsed Collector Current (Icm): 280 A
  • Vce(on) @ Vge = 15V, Ic = 32A: 3.2V
  • Mounting: Through-hole
  • Package: TO-247-3
  • Operating Temperature Range: -55°C to 150°C
  • REACH: Not affected

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