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Same model may have multiple batches, images only for reference.
IXFB170N30P Real Image
Same model may have multiple batches, images only for reference.

IXFB170N30P

Part No IXFB170N30P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH TO-264
Datasheet
IXFB170N30P Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 300V
Continuous Drain Current at 25°C 170A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 1mA
Max Gate Charge 258nC @ 10V
Max Input Capacitance 20000pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1250W (Tc)
Maximum Rds On at Id,Vgs 18 mOhm @ 85A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PLUS264
Dimension TO-264-3, TO-264AA
Win Source Part Number 205676-IXFB170N30P
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IXFB170N30P CAD Model

Description

The IXFB170N30P is an N-channel MOSFET manufactured by IXYS. IXYS

  • Supply and Demand Status: Balanced
  • Maximum Power Dissipation: 1250W (Tc)
  • Maximum Drain-Source Breakdown Voltage: 300V

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $41.1276 $82.2552
4+ $33.7456 $134.9824
6+ $32.6911 $196.1466
8+ $31.6366 $253.0928
10+ $30.5820 $305.8200
13+ $27.4183 $356.4379
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Availability: 5,484 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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