The IXFH22N60P3 is an N-channel MOSFET from IXYS.

• Drain-Source Breakdown Voltage: 600V
• Continuous Drain Current at 25°C: 22A (Tc)
• Maximum Rds On at Id, Vgs: 360 mOhm @ 11A, 10V
• Gate-Source Threshold Voltage: 5V @ 1.5mA
• Maximum Gate-Source Voltage: ±30V
• Max Gate Charge: 38nC @ 10V
• Mounting Type: Through Hole
• Package: TO-247AD (IXFH)
• Power Dissipation (max): 500W (Tc)
• Drive Voltage (max Rds On, Min Rds On): 10V
• Temperature Range: -55°C to 150°C (TJ)
• Packaging: Tube/Rail
• Dimension: TO-247-3
• Popularity: Medium
• Supply and Demand Status: Sufficient