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Same model may have multiple batches, images only for reference.
IXFH30N60P Real Image
Same model may have multiple batches, images only for reference.

IXFH30N60P

Part No IXFH30N60P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 30A TO-247
Datasheet
IXFH30N60P Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 4mA
Max Gate Charge 82nC @ 10V
Max Input Capacitance 4000pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 500W (Tc)
Maximum Rds On at Id,Vgs 240 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AD (IXFH)
Dimension TO-247-3
Win Source Part Number 1049414-IXFH30N60P
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXFH30N60P CAD Model

Description

The IXFH30N60P is an N-channel MOSFET transistor with a breakdown voltage of 600V and a continuous drain current of 30A (Tc).

  • Maximum Rds On at Id, Vgs: 240 mOhm @ 15A, 10V
  • Gate-Source Threshold Voltage: 5V @ 4mA
  • Maximum Gate Charge: 82nC @ 10V
  • Maximum Input Capacitance: 4000pF @ 25V
  • Packaging: Tube/rail
  • Mounting: Through hole
  • Technology: MOSFET
  • Polarity: N-channel
  • Power Dissipation (max): 500W (Tc)
  • Temperature Range: -55°C to 150°C (TJ)
  • Manufacturer Package: TO-247AD (IXFH)
  • Dimension: TO-247-3
  • Manufacturer: IXYS

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48+ $7.2941 $350.1168
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