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IXFH60N60X

Part No IXFH60N60X
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 60A TO247 / X-CLASS HIPERFET POWER MOSFET
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Series HiPerFET
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 600V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4.5V @ 8mA
Gate Charge (Qg) (Maximum) @ Vgs 143nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 5800pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 890W (Tc)
Rds On (Maximum) @ Id, Vgs 55 mOhm @ 30A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-247
Package TO-247-3
Win Source Part Number 777613-IXFH60N60X
Popularity Medium
Supply and Demand Status Limited
ECCN EAR99
Halogen Free Compliant
Ultra Librarian 3D Model Ultra Librarian IXFH60N60X CAD Model

Description

The IXFH60N60X is a N-Channel MOSFET transistor designed for use in Discrete Semiconductor Products - Transistors - FETs, MOSFETs, manufactured by IXYS.

  • Series: HiPerFET
  • Drain to Source Voltage (Vdss): 600V
  • Power Dissipation (Max) @ Tc: 890W
  • Package Type: Through Hole
  • Package / Case: TO-247-3
  • Operating Temperature Range: -55°C ~ 150°C (TJ)
  • Gate-Source Voltage (Vgs): ±30V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Rds On (Max) @ Id, Vgs: 55 mOhm @ 30A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $27.8572 $55.7144
5+ $22.8572 $114.2860
7+ $22.1429 $155.0003
10+ $21.4286 $214.2860
13+ $20.7143 $269.2859
17+ $18.5714 $315.7138
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 600 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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