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Same model may have multiple batches, images only for reference.
IXFH6N120P Real Image
Same model may have multiple batches, images only for reference.

IXFH6N120P

Part No IXFH6N120P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1200V 6A TO-247
Datasheet
IXFH6N120P Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 1200V (1.2kV)
Continuous Drain Current at 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 1mA
Max Gate Charge 92nC @ 10V
Max Input Capacitance 2830pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 250W (Tc)
Maximum Rds On at Id,Vgs 2.4 Ohm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AD (IXFH)
Dimension TO-247-3
Win Source Part Number 205680-IXFH6N120P
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IXFH6N120P CAD Model

Description

The IXYS IXFH6N120P is an N-channel MOSFET designed for use in various discrete semiconductor products. IXYS

  • Drain-Source Breakdown Voltage: 1200V
  • Continuous Drain Current: 6A @ 25°C
  • Maximum Rds On: 2.4 Ohm @ 500mA, 10V
  • Gate-Source Threshold Voltage: 5V @ 1mA
  • Mounting Type: Through-Hole
  • Operating Temperature: -55°C to 150°C
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
10+ $5.3892 $53.8920
20+ $5.0481 $100.9620
31+ $4.8775 $151.2025
45+ $4.5364 $204.1380
58+ $4.3659 $253.2222
72+ $4.1954 $302.0688
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Availability: 21,000 pieces
MOQ: 10 pcs
Order Increment : 1 pcs
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