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Same model may have multiple batches, images only for reference.
IRFH5215TRPBF Real Image
Same model may have multiple batches, images only for reference.

IRFH5215TRPBF

Part No IRFH5215TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 5A PQFN
Datasheet
IRFH5215TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 5A (Ta), 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 100μA
Max Gate Charge 32nC @ 10V
Max Input Capacitance 1350pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.6W (Ta), 104W (Tc)
Maximum Rds On at Id,Vgs 58 mOhm @ 16A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PQFN (5x6)
Dimension 8-VQFN Exposed Pad
Win Source Part Number 1046876-IRFH5215TRPBF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRFH5215TRPBF CAD Model

Description

The Infineon Technologies 1046876-IRFH5215TRPBF is an N-channel MOSFET that comes in a PQFN (5x6) package.

  • Drain-Source Breakdown Voltage: 150V
  • Continuous Drain Current: 5A (Ta), 27A (Tc)
  • Maximum Rds On @ Id,Vgs: 58 mOhm @ 16A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Frequency Transition: 10V
  • Category: discrete semiconductor product
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Maximum Power Dissipation: 3.6W (Ta), 104W (Tc)
  • Supply and Demand Status: sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.1882 $59.4100
105+ $1.1116 $116.7180
165+ $1.0732 $177.0780
235+ $0.9965 $234.1775
305+ $0.9582 $292.2510
380+ $0.9200 $349.6000
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Availability: 28,000 pieces
MOQ: 50 pcs
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