The IXFK21N100Q is a MOSFET transistor from IXYS, designed for use in discrete semiconductor products.

• GPTDescription: It is a HiPerFET series transistor with a N-channel type.
• GPTDescription: The transistor has a maximum drain-source voltage of 1000V and a continuous drain current of 21A @ 25°C.
• GPTDescription: It has a maximum power dissipation of 500W @ Tc.
• GPTDescription: The transistor has a gate-source threshold voltage of 5.5V @ 4mA and a gate charge of 170nC @ 10V.
• GPTDescription: The input capacitance is 6900pF @ 25V.
• GPTDescription: The transistor is packaged in a TO-264-3, TO-264AA package and is mounted through hole.
• GPTDescription: The operating temperature range is -55°C to 150°C (TJ).
• GPTDescription: The IXFK21N100Q is a popular transistor with a medium level of popularity in the market.
• GPTDescription: Its estimated EOL date is 2019.