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Same model may have multiple batches, images only for reference.
IXFK27N80Q Real Image
Same model may have multiple batches, images only for reference.

IXFK27N80Q

Part No IXFK27N80Q
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 27A TO-264
Datasheet
IXFK27N80Q Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 800V
Continuous Drain Current at 25°C 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 4mA
Max Gate Charge 170nC @ 10V
Max Input Capacitance 7600pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 500W (Tc)
Maximum Rds On at Id,Vgs 320 mOhm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-264AA (IXFK)
Dimension TO-264-3, TO-264AA
Win Source Part Number 205684-IXFK27N80Q
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IXFK27N80Q CAD Model

Description

The IXFK27N80Q is an N-channel MOSFET from IXYS that can handle a maximum power dissipation of 500W (Tc).

  • Drain-Source Breakdown Voltage: 800V
  • Continuous Drain Current: 27A (Tc)
  • Gate-Source Threshold Voltage: 4.5V @ 4mA
  • Maximum Gate Charge: 170nC @ 10V
  • Case/Package: TO-264AA
  • Temperature Range: -55°C to 150°C (TJ)
  • Popularity Rate: 35%
  • Supply and Demand Status: Limited
  • Commonly Used In: Discrete semiconductor products

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $13.1866 $52.7464
10+ $10.8198 $108.1980
15+ $10.4816 $157.2240
20+ $10.1435 $202.8700
26+ $9.8054 $254.9404
35+ $8.7911 $307.6885
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,630 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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